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Applied Mathematcs&Physics, mathematical models, simulations, software
Position in model design and analysis, numerical simulation and software development.
Scientist
About Me
Industry: |
Research |
|---|---|
Occupation: |
Scientist |
Highlights: |
I develop numerical models, numerical methods and software tools for numerical modeling of transient crystal growth processes of bulk crystal growth of doped and compound materials (with taken into account phase diagram and chemical reactions). Efficient numerical methods provide stable solution and high performance that allows the simulating of long-time crystal growth processes without using power supercomputers. I suggested the numerical criterion for the prediction of defect appearance during directional crystallization. This criterion and my fast calculations could help in the design of low defect growth of different semiconductors of large size (diameter and length) and how to improve the current technology regime. I have about sixty publications; twenty seven papers are peer-reviewed research publications. |
Education level: |
Doctorate |
Will Relocate: |
Yes |
Location: |
Pleasanton, CA |
Work Experiences
2/2008 - Present
(private)Self-Employed
- • Performed transient mathematical modeling of processes of directional solidification of crystal growth
9/2006 - 9/2007
AXT, Inc
Contractor / Freelance
- • Performed transient mathematical modeling of extensive number of GaAs growth processes by VGF; • Numerical study of crystallization dynamics at the point of defect appearance; • Developed numerical criterion of defect appearance during crystal growth process; • Presentations and training sections for engineers devoted to explanations of peculiarities of VGF process; • Recommended technology modifications for yield improvement and reducing of cycle time.
3/1995 - 12/2005
Institute for Mathematical Modeling, Russian Academy of Sciences, Moscow, Russia
Individual Contributor
- Developed mathematical models, numarical methods, software for simulations of transient crystallization processes of different semiconductros (pur, doped and compound alloys). Numerical simulations of crystal growth experiments performed in different research organizations of Russia, USA, France, Spaine, Latvia.Results were presented at 13 scientific conferences, more than forty presentations were done. About fifty papres were published.
9/1985 - 3/1995
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Moscow, Russia
Individual Contributor
- Developed mathematical models, numerical methods and software for calculations of steady state (and quasy steady state) problem of crystal growth, Performed simulations of different crystal growth experiments in quasy steady state formulations.
Education
1992
Doctorate Degree
Institute for Mathematical Modeling, Russian Academy of Sciences, Moscow, Russia
- mathematical models, numerical methods and computer codes
1978
Master Degree
Lomonosov Moscow State University, Moscow, Russia
- applied mathematics and physics
Keywords
heat/mass transfer, fluid dynamics and magnetic hydrodynamics, phase transition, semiconductors, the optimisation of yield, mathematical models, crystal growth, numerical methods, simulations, data analysis, radiation heat exchange, FORTRAN, C, Two and three dimentional modeling, •Evaluation and testing of software products, presentations and trainings, scientific paper writing
