Epfl, Switzerland Work Values

Daily Duties at Epfl, Switzerland:

• Development of a top-down Si nanowire platform to shrink the Si nanowire cross-section down to 5 nm. • Integration of local stressors in GPa level as CMOS boosters in suspended Si NW platforms (bulk, SOI). • Integration of ALD high-k/metal-gate stack in a Si NW CMOS process flow for the first time at EPFL. • Electrical characterization of Si nanowire MOSFETs vs. temperature, extraction of key device parameters • Development of a 3D TCAD Sentaurus Si NW simulation platform for precise corner effect and mobility extraction in GAA Si nanowire junctionless/accumulation-mode MOSFETS with sub-5 nm cross-section. • Stress measurement on buckled Si nanowires on both SOI and bulk Si by micro-Raman spectroscopy. • Project meeting attendance inside/outside EPFL to present in-progress tasks and achievements. • Result presentation with hard deadline at competitive international conferences and journals.

What they like about Epfl, Switzerland:

You give high priority to hiring firms with prestige. Market reputation and prestige of a firm may be determined through on-line research, and conversations with individuals working in your target industry. Note that firms "in the public eye" receive a great deal more critical publicity and attention than those operating with more anonymity. So as you assess your employment opportunities, be sure to seek out the positive aspects of the firm's reputation in addition to noting negative publicity the company may have received.

Tags

Matlab, process development engineer, device engineer, Thin film, Lithography, MEMS, Nanotechnology, Microelectronics, nanoelectronics, nanowire, AFM, metrology, semiconductor device physics, Electrical engineering, microsystems, laser doppler vibrometry, FIB, SEM, ALD, CVD, PVD, e-beam lithography, semiconductor, CMP, SOI, bulk Si, TCAD Sentaurus, data analysis, Semiconductor parameter analyzer, Cadence, resonator, Origin, Excel, Microsoft office

Skills

fabrication, Matlab, TCAD Sentaurus, MEMS, simulation, AFM, Process development, nanotechnology, nanoelectronics, microelectronics, thin film, e-beam lithography, SEM, FIB, Silicon, SOI, Laser Doppler Vibrometry, Origin, Design of experiment, Data analysis, Raman, MOSFET, Semiconductor device physics, nanowire, Strain engineering, thermal oxidation, electrical/optical device characterization

These are some of the questions we asked our climbers about their experiences with Epfl, Switzerland: